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溅射参数对FeˉSi化合物的相形成及结构的影响

Keywords: 磁控溅射,溅射参数,FeˉSi化合物,Xˉ射线衍射,晶体结构

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Abstract:

对直流磁控溅射方法制备FeˉSi化合物的工艺过程进行了研究.首先通过改变溅射气压,溅射功率和Ar气流量,在Si(100)衬底上沉积约100nm纯金属Fe膜,随后在真空退火炉中800℃长时间退火形成FeˉSi化合物.由X射线衍射(XRD)对所形成的FeˉSi化合物的物相和晶体结构进行分析,给出了一组最优化的溅射工艺参数溅射Ar气压1.5Pa,溅射功率100W,溅射Ar气流量20SCCM.

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