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热处理对PZT薄膜织构形成的影响

, PP. 114-117

Keywords: Pb(Zr,Ti)O3,热处理,薄膜取向,铁电性

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Abstract:

分别采用传统热处理(CFA)和快速热处理(RTA)对室温溅射在Pt(111)/Ti/SiO2/Si(100)基片上的Pb(Zr,Ti)O3(PZT)进行了晶化处理.结果表明RTA倾向于形成(111)占优取向,而CFA倾向于形成(100)占优取向.不同工艺条件下的取向选择来源于形核机制的不同.在CFA条件下,形核在薄膜表面的PbO(100)处发生,导致(100)占优取向;在RTA条件下,形核在基片附近的Pt3Pb(111)/PZT界面处发生,导致(111)占优取向.铁电性能测试表明,由RTA处理得到的具有(111)占优取向的PZT薄膜剩余极化达到35μC/cm2.

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