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[5]
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SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
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DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
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[27]
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[31]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[32]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
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[35]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[36]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
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[38]
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[39]
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[43]
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[44]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[45]
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[46]
NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[47]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[48]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
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DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[50]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[51]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[52]
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[55]
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[56]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[57]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[58]
NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[59]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[60]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
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DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[62]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[63]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[64]
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[65]
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[67]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[68]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[69]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
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NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[71]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[72]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
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DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[74]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[75]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[76]
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BBOCHKAREVA N I, VORONENKOV V V, GORBUNOV R I, et al.Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes[J].Appl Phys Lett,2010,96:133502-
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[79]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[80]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[81]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[82]
NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[83]
DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[84]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[85]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
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DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[88]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[89]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[91]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[92]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[93]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[94]
NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[95]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[96]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
[97]
DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[98]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[99]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[100]
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[103]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[104]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[105]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
[106]
NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[107]
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[110]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[111]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[112]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
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DDAVID A, GRUNDMANN M J, KAEDING J F, et al.Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2008,92:053502-
[116]
HHAN S H, LEE D Y, LEE S J, et al.Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes[J].Appl Phys Lett,2009,94:231123-
[117]
HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
[118]
VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
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HAN S H, CHO C Y, LEE S J, et al.Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes[J].Appl Phys Lett,2010,96:051113-
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VURGAFTMAN I, MEYER J R.Band parameters for nitrogen-containing semiconductors[J].J Appl Phys,2003,94:3675-
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NEUFELD C J, CRUZ S C, FARRELL R M, et al.Effect of doping and polarization on carrier collection in InGaN quantum well solar cells[J].Appl Phys Lett,2011,98:243507-
[123]
KKIM M H, SCHUBERT M F, DAI Q, et al.Origin of efficiency droop in GaN-based light-emitting diodes[J].Appl Phys Lett,2007,91:183507-
[124]
SSCHUBERT M F, XU J, KIM J K, et al.Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop[J].Appl Phys Lett,2008,93:041102-
[125]
DDING K, ZENG Y P, WEI X C, et al.A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes[J].Appl Phys B: Lasers Opt,2009,97:465-468
[126]
SSHEN Y C, MUELLER G O, WATANABE S, et al.Auger recombination in InGaN measured by photoluminescence[J].Appl Phys Lett,2007,91:141101-
[127]
KKIM A Y, GO W, STEIGERWALD D A, et al.Performance of High-Power AlInGaN Light Emitting Diodes[J].Phys Status Solidi A,2001,188:15-21
[128]
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