WU T B, WU C M, CHEN M L. Highly insulative barium zircon- ate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications [J]. Appl Phys Lett, 1996, 69: 2659–2661. [2] KIM W J, CHANG W, QADRI S B, et al. Effect of LaNiO3 interlayer on dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited on dif- ferently oriented Pt electrodes [J]. Appl Phys Lett, 2002, 81: 5012– 5014. [3] ZHAI J W, YAO X, SHEN J, et al. Structural and dielectric properties of Ba(ZrxTi1?x)O3 thin films prepared by the sol–gel process [J]. J Phys D: Appl Phys, 2004, 37: 748–752. [4] HIS C S, CHEN C Y, WU N C, et al. Dielectric properties of Ba(ZrxTi1?x)O3 thin films prepared using radio frequency magnetron sputtering [J]. J Appl Phys, 2003, 94: 598–604. [5] TANG X G, WANG X X, WONG H K, et al. Effects of texture on thedielectric properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by pulsed laser deposition [J]. Appl Phys A, 2005, 81: 1253–1256. [6] MIAO J, YUAN J, WU H, et al. Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films [J]. Appl Phys Lett, 2007, 90: 022903–1–3. [7] CHOI W S, YIN J, HONG B. The effect of cerium doping in barium zirconate titanate thin films deposited by rf magnetron sputtering sys- tem [J]. Mater Sci Eng B, 2004, 109: 146–151. [8] JIE W J, ZHU J, QIN W F, et al. Enhanced dielectric characteristics of preferential (111)-oriented BZT thin films by manganese doping [J]. J Phys D: Appl Phys, 2007, 40: 2854–2857, [9] TANG X G, TIAN H Y, WANG J, et al. Effect of CaRuO3 interlayer on the dielectric properties of Ba(Zr, Ti)O3 thin films prepared by pulsed laser deposition [J]. Appl Phys Lett, 2006, 89: 142911–1–3. [10] TANG X G, LIU Q X, JIANG Y P, et al. Enhanced dielectric properties of highly (100)-oriented Ba(Zr,Ti)O3 thin films grown on La0.7Sr0.3? MnO3 bottom layer [J]. J Appl Phys, 2006, 100: 114105–1–5. [11] ZHOU C, NEWNS D M. Intrinsic dead layer effect and the perform- ance of ferroelectric thin film capacitors [J]. J Appl Phys, 1997, 82: 3081–3088. [12] PARK W Y, HWANG C S. Film-thickness-dependent Curie–Weiss behavior of (Ba,Sr)TiO3 thin-film capacitors having Pt electrodes [J]. Appl Phys Lett, 2004, 85: 5313–5315.
