DELHAES P.Chemical vapor deposition and infiltration processes of carbon[J].Carbon,2002,40:641-657. [2]AGNèS Oberlin.Pyrocarbons—Review[J].Carbon,2002,40:7-24. [3]DONG G L,HüTTINGER K J.Consideration of reaction mechanisms leading to pyrolytic carbon of different textures[J].Carbon,2002,40:2515-2528. [4]乔生儒,骆蓉,杨峥.C/C复合材料表面沉积SiC的形态和成分[J].航空学报,1994,15(11):1399-1402.QIAO Shengru,LUO Rong,YANG ZHENG.Acta Aeronautica Et As-tronautica Sinca(in Chinese),1994,15(11):1399-1402. [5]刘荣军,张长瑞,周新贵,等.CVD SiC致密表面涂层制备及表征[J].材料工程,2005(4):3-6.LIU Rongjun,ZHANG Chengrui,ZHOU Xingui,et al.Mater Eng(in Chinese),2005(4):3-6. [6]肖鹏,徐永东,黄伯云.沉积条件对CVDSiC沉积热力学与形貌的影响[J].无机材料学报,2002,17(4):877-881.XIAO Peng,XU Yongdong,HUANG Boyun.J Inorg Mater(in Chi-nese),2002,17(4):877-881. [7]张长瑞,刘荣军,曹英斌.沉积温度对CVD SiC涂层显微结构的影响[J].无机材料学报,2007,22(1):153-158.ZHANG Changrui,LIU Rongjun,CAO Yingbin.J lnorg Mater(in Chinese),2007,22(1):153-158. [8]邓清,肖鹏,熊翔.沉积温度对SiC涂层微观结构及组成的影响[J].粉末冶金材料科学与工程,2006,11(5):304-309.DENG Qing,XIAO Peng,XIONG Xiang.Mater Sci Eng Powder Metal(in Chinese),2006,11(5):304-309. [9]宋麦丽,邹武,王涛,等.CVI工艺对CVI—SiC基体及C/SiC复合材料性能的影响[J].宇航材料工艺,2001(1):24-28.SONG Maili,ZOU Wu,WANG Tao,et al Aerospace Mater Technol(inChinese),2001(1):24-28. [10]刘荣军,周新贵,张长瑞,等.化学气相沉积工艺制备SiC涂层[J].宇航材料工艺,2002(5):42-44.LIU Rongjun,ZHOU Xingui,ZHANG Chengrui,et al.Aerospace Mater Technol(in Chinese),2002(5):42-44. [11]LOUMAGNE F,LANGLAIS F,NASLAIN R,et al.Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3-H2[J].Thin Solid Films,1995,254:75-82. [12]PEDERSEN H,LEONE S,HENRY A,et al.Very high epitaxial growth rate of SiC using MTS as chloride-based precursor[J].Surf Coat Tech,2007,201:8931-8934. [13]徐永东.三维碳/碳化硅复合材料的制备与性能[D].西安:西北工业大学,1996.XU Yongdong.Preparation and properties of3D-C/SiC composites(in Chinese,dissertation).Xian:Northwestern Polytechnical University,1996. [14]GANS M,DORVAL N,LEFEBVRE M,et al.In situ optical analysis of the gas phase during the deposition silicon carbide from methyltri-chlorosilane[J].J Electrochem Soc,1996,143:1654-1661. [15]HU Zijun,HüTTINGER K J.Mechanisms of carbon deposition—a kinetic approach[J].Carbon,2002,40:624-628. [16]SONE H,KANEKO T,MIYAKAWA N.In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from me-thyltrichlorosilane[J].J Cryst Growth,2000,219:245-252.
