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磷掺杂对非晶硅薄膜结构及光电性能的影响

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Abstract:

采用射频等离子增强化学气相沉积方法制备了磷掺杂氢化非晶硅(a-SiH)薄膜。通过Raman散射光谱研究了不同磷烷掺杂含量薄膜的微结构,利用分光光度计对薄膜的厚度、消光系数和折射率进行了模拟,用高阻仪测得了非晶硅薄膜暗电导率。结果表明薄膜的中程有序度随着磷掺杂量φ(体积分数)的增加而减小;折射率在φ为0.8%时最大;在结构无序度随着φ而增大的影响下,薄膜暗电导率在φ为1%时达到最大,为8.41×10-3S/cm。

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