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A位和B位Mn掺杂对Sr2Bi4Ti5O18电磁性能的影响

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Abstract:

采用固相烧结工艺制备MnxSr2?xBi4Ti5O18(A-SBTi-x,x=0~0.08)和Sr2Bi4MnyTi5?yO18(B-SBTi-y,y=0~0.08)陶瓷样品,对比研究它们的结构和电磁性能。X射线衍射谱显示A位Mn掺杂对材料晶格常数a影响较大零掺杂时,a=0.3868nm;当Mn摩尔掺量为0.02时,a减小为0.3856nm;此后a随Mn掺量增加而增加,最大达到0.3870nm。B位Mn掺杂对晶格常数的影响较小。当Mn掺量很小时,A位和B位掺杂对剩余极化强度(2Pr)的影响不同;当Mn掺量较多时,A位和B位掺杂对2Pr的影响相似。室温,两种晶位掺杂的Mn离子均使材料表现出弱铁磁性。

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