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2012年发表的前10名高被引频次论文

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Abstract:

采用低温水热技术,制备了铝掺杂氧化锌(Al-ZnO,AZO)纳米光电材料,利用X射线衍射、场发射扫描电子显微镜、光电子能谱仪及半导体分析仪研究了铝掺杂浓度对AZO纳米线阵列的结构、形貌、表面化学结构及电学性能的影响。结果表明Al3+已经成功取代Zn2+,掺杂进入氧化锌的晶格,形成了Al—O键;AZO纳米线阵列为单晶结构,其取向垂直、形貌良好、致密度高;随着硝酸铝浓度的增加,AZO纳米线阵列的长径比增加、电导率增加、电阻降低。铝掺杂导致AZO纳米线阵列电学性能的改善归因于铝占据ZnO晶格中锌位置引起电子浓度的净增加。

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