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In含量对Ge–In–Se薄膜光学特性的影响

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Abstract:

采用磁控溅射法制备了Ge–In–Se硫系薄膜,利用X射线衍射、可见–近红外吸收光谱和Raman光谱分析等技术对Ge–In–Se硫系薄膜的相态、结构和光学特性进行了研究和分析。结果表明该Ge–In–Se薄膜具有良好的非晶特性。Raman光谱分析表明[GeSe4]四面体Ge—Se键的高频振动模式是该薄膜的主要振动模式之一,且Ge—Se键的振动强度随着In含量的增加而减小;当In的含量达到13.87%(摩尔分数)时,[GeSe4]四面体消失,而[InSe4]四面体的对称伸缩振动模式成为了主要振动模式。采用Swanepoel方法和经典Tauc方程计算发现随着In含量增加,该薄膜的短波吸收限红移,折射率逐渐增大,光学带隙逐渐减小。

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