YANG Yongjuan, GU Qingtian, ZHANG Huaijin, et al. J Chin Ceram Soc, 2012, 40(6): 883－887.
[2]
LEI Zuotao, ZHU Chongqiang, YANG Chunhui. et al. Growth of crack－free ZnGeP2 large single crystals for high－power mid－infrared OPO applications[J]. J Cryst Growth, 2014, 389：23－29.
[3]
PERDEW J P, ZUNGER A. Self－interaction correction to density－functional approximations for many－electron systems[J]. Phys Rev B， 1981, 23: 5048－5079.
[4]
HAMANN D R, SCHLUTER M, CHIANG C. Norm－conserving pseudopotentials[J]. Phys Rev Lett， 1979, 43: 1494－1497.
[5]
SAHA S, SINHA T P, MOOKERJEE A. Electronic structure, chemical bonding, and optical properties of paraelectric BaTiO3[J]. Phys Rev B， 2000, 62: 8828－8834.
YANG Chunhui, ZHANG Jian. J Synth Cryst (in Chinese), 2004, 33(2): 141－143.
[8]
YAO Baoquan, LI Gang, ZHU Guoli, et al. Comparative investigation of long－wave infrared generation based on ZnGeP2 and CdSe optical parametric oscillators[J]. Chin Phys B, 2012, 21(3): 034213(1－6)．
[9]
SCHUNEMANN P G, POLLAK T M. Ultralow gradient HGF－grown ZnGeP2 and GdGeAs2 and their optical properties[J]. MRS Bull, 1998, 23(7): 23－27.
[10]
ZAWILSKI K T, SETZLER S D, SCHUNEMANN P G, et al. Increasing the laser－induced damage threshold of single－crystal ZnGeP2[J]. J Opt Soc Am B: Opt Phys, 2006, 23(10): 2310－2316.
WANG Meng, YANG Chunhui, LEI Zuotao, et al. J Chin Ceram Soc, 2009, 37(11): 1947－1950.
[18]
ZAWILSKI K T, SCHUNEMANN P G, SETZLER S D, et al. Large aperture single crystal ZnGeP2 for high－energy applications[J]. J Cryst Growth, 2008, 310(7－9): 1891－1896.
[19]
VEROZUBOVA G A, GRIBENYUKOV A I. Growth of ZnGeP2 crystals from melt [J]. Crystallogr Rep, 2008, 53(1): 158－163.
[20]
XIA Shixing, WANG Meng, YANG Chunhui, et al. Vertical Bridgman growth and characterization of large ZnGeP2 single crystals[J]. J Cryst Growth, 2011, 314: 306－309.
[21]
HALLIBURTON L E, RAKOWSKY M H, SCHUNEMANN P G, et al. Electron－nuclear double resonance of the zinc vacancy in ZnGeP2[J]. Appl Phys Lett, 1995, 66(20): 2670－2672.
[22]
GILES N C, HALLIBURTON L E, SCHUNEMANN P G. Photoinduced electron paramagnetic resonance of the phosohorus vacancy in ZnGeP2[J]. Appl Phys Lett, 1995, 66(14): 1758－1760.
[23]
SETZLER S D, GILES N C, HALLIBURTON L E, et al. Electron paramagnetic resonance of a cation antisite defect in ZnGeP2[J]. Appl Phys Lett, 1999, 74(9): 1218－1220.
[24]
GEHLHOFF W, AZAMAT D, HOFFMANN A. Structure and energy level of native defects in as－grown and electron－irradiated zinc germanium diphosphide studied by EPR and photo－EPR [J]. J Phys Chem Solids, 2003, 64: 1923－1927.
[25]
SHIMONY Y, RAZ O, KIMMEL G, et al. On defects in tetragonal ZnGeP2 crystals[J]. Opt Mater, 1999, 13: 101－109.
[26]
SHIMONY Y, FLEDMAN R, DAHAN I, et al. Anti－phase domain boundaries in ZnGeP2 (ZGP)[J]. Opt Mater, 2001, 16: 119－123.
[27]
VEROZUBOVA G A, OKUNEV A O, GRIBENYUKOV A I, et al. Growth and defect structure of ZnGeP2 crystals[J]. J Cryst Growth, 2010, 312: 1122－1126.
POURGHAZI A, DADSETANI M. Electronic and optical properties of BaTe, BaSe and BaS from first principles[J]. Physica B， 2005, 370: 35－45.
[32]
BUDNI P A, POMERANZ L A, LEMONS M L, et al. 10W mid－IR holmium pumped ZnGeP∶OPO[J]. Adv Solid State Lasers, 1998, 19: 226－229.
[33]
ZHU Guoli, JU Youlun, WANG Tianheng, et al. A mid－IR 14.1 W ZnGeP2 optical parametric oscillator pumped by a Tm,Ho:GdVO4 laser[J]. Chin Phys Lett, 2009, 26(3): 034208.
