Kioupakis, Emmanouil, Patrick R, et al. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J]. Applied Physics Letters, 2011, 98(16): 161107-1-3.
[2]
Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence[J]. Applied Physics Letters, 2007, 91(14): 141101-1-3.
[3]
Delaney, Kris T, Patrick R, et al. Auger recombination rates in nitrides from first principles [J]. Applied Physics Letters, 2009, 94(19): 191109-1-3.
[4]
Pope, I A, Smowton P M. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm [J]. Applied Physics Letters, 2003, 82(17): 2755-2757.
[5]
Mao, A, Jaehee C. Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers [J]. Electronic Materials Letters, 2012, 8(1):1–4.
[6]
Meyaard, David S, Qi F, et al. On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes [J]. Applied Physics Letters, 2011, 99(4): 041112-1-3.
[7]
Bulashevich K A, Karpov S Yu. Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes [J]. Physica Status Solidi (C), 2008, 5(6): 2066–2069.
[8]
Xie J Q, Xian F N, Qian F, et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers [J]. Applied Physics Letters, 2008, 93(12): 121107-1-3.
[9]
Kunzer M, Leancu C C, Maier M, et al. Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures [J]. Physica Status Solidi (c), 2008, 5(6): 2170–2172.
[10]
Efremov A A, Bochkareva N I, Gorbunov R I, et al. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs [J]. Semiconductors, 2006, 40(5): 605–610.
[11]
Reed M L, Readinger E D, Moe C G, et al. Benefits of negative polarization charge in n-InGaN on p-GaN single heterostructure light emitting diode with p-side down [J]. Physica Status Solidi (c), 2009, 6(2): 585–588.
[12]
Kim A Y, Steigerwald D A, Wierer J J, et al. Performance of High-Power AlInGaN Light Emitting Diodes [J]. Physica Status Solidi (a), 2001, 188(1): 15–21.
[13]
Son J H, Lee J L. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes [J]. Optics Express, 2010, 18(6): 5466-5469.
[14]
CheongM G, Liu C, Choi H W, et al. Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells [J]. J Appl Phys, 2003, 93(8): 4691-4695.
[15]
Morel A, Lefebvre P, Kalliakos S, et al. Donor acceptor like behavior of electron-hole pair recombination in low densional GaInN/GaN systems [J]. Phys Rev B, 2003, 68( 4): 045331-1-7.
[16]
Humphreys C J. Does In form In-rich clusters in InGaN quantum wells ? [J]. Philosophical Magazine, 2007, 87 (13): 1971-1982.
