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近期光刻用ArF准分子激光技术发展

, PP. 522-527

Keywords: 激光技术,ArF准分子激光,光刻,双图形

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Abstract:

193nmArF准分子激光光刻技术已广泛应用于90nm以下节点半导体量产。ArF浸没式也已进入45nm节点量产阶段。双图形光刻(DPL)技术被业界认为是下一代光刻32nm节点最具竞争力的技术。利用双图形技术达到32nm及以下节点已经被诸多设备制造商写入自己的技术发展线路。Cymer公司和Gigaphoton公司为双图形光刻开发了高输出功率、高能量稳定性和具有稳定的窄谱线宽度ArF准分子光源。分析了近期发展用于改进准分子激光性能的关键技术主振-功率再生放大(MOPRA)结构、主振-功率振荡(MOPO)结构,主动光谱带宽稳定技术,先进的气体管理技术。对光刻用准分子激光光源技术发展趋势进行了简要的讨论。

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