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含Rashba自旋轨道耦合二维电子气结构中电子反常位移及自旋分离

, PP. 318-323

Keywords: 光电子学,自旋分离,Goos-H?nchen位移,Rashba自旋轨道耦合

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Abstract:

研究了含Rashba自旋轨道耦合的磁电调制半导体二维电子气中弹道电子的反常位移(Goos-H?nchen位移,即GH位移)。计算中发现,通过调节结构的各个参数包括入射角、磁场强度和Rashba自旋轨道耦合系数,可以有效地调控GH位移,并且在一定条件下可以为负。电子的GH位移和自旋极化态有密切关系,这个自旋相关的位移可以用来分离不同自旋极化的电子束。基于这种现象,提出了一种利用GH位移在半导体2DEG中分离不同自旋极化电子的方法。

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