NELSON W B. Accelerated life testing-step-stress models and data analysis[J]. Trans on Reliability, 1980, 29(2): 103- 106.
[2]
LI Zhi-guo, SONG Zeng-chao, CHENG Yao-hai, et al. A study on GaAs FET's failure mechanism and experimental tech- nology of rapid evaluation of reliability[C] // IEEE. Annual Proceedings-Reliability Physics. Dallas, United States: Institute of Electrical and Electronics Engineers Inc, 2003: 576-577.
[3]
李志国,宋增超,孙大鹏.GaAs FET失效机理及快速评价实验技术的研究[J].半导体学报,2003,24(8):856-860.LI Zhi-guo, SONG Zeng-chao, SUN Da-peng. A study on GaAs FET's failure mechanism and experimental technology of rapid evaluation of reliability[J]. Chinese Journal of Semiconductors, 2003, 24(8): 856-860.(in Chinese)
[4]
ZHANG Wan-rong, LI Zhi-guo, MU Fu-chen. Rapid evaluation degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers [J]. Solid-State Electronics, 2001,45(7): 1183-1187.
[5]
莫郁薇.热应力对半导体分立器件失效率的影响[J].电子产品可靠性与环境试验,1996(5):25-31.MO Yu-wei. Effect of thermal stress on semiconductor devices' failure rate[J]. Electronic Product Reliability and Environ- mental Testing, 1996(5): 25-31. (in Chinese)
[6]
TAKEMOTO Y. Design of accelerated reliability tests based on simple-step-stress model[C]//IEEE Reliability Society. Pro- ceedings of the Annual Reliability and Maintainability Symposium. Tampa, FL, United States: Institute of Electrical and Electronics Engineers Inc, 2003: 111-116.
[7]
SHYUR H J, ELSAYED E A, LUXHOJ J T. A general model for accelerated life testing with time-dependent covariates [J]. Naval Research Logistics, 1999, 46(3): 303-321.
[8]
REDHEAD PA. Thermal desorption of gases[J]. Vacuum, 1962, 12(7): 203-211.
[9]
PASCO R W, SCHWARZ J A. Temperature-ramp resistance analysis to characterize electromigration[J]. Solid-State Elec- tronics, 1983, 26(5): 445-452.