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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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FeNiCrSiB／Cu／FeNiCrSiB膜的磁畴结构和巨磁阻抗效应
, PP. 535-538
Keywords: 巨磁阻抗效应,磁畴结构,软磁合金,薄膜
Abstract:
用高频溅射法制备了ＦｅＮｉＣｒＳｉＢ／Ｃｕ／ＦｅＮｉＣｒＳｉＢ膜,经３５０℃退火２０ｍｉｎ后得到性能优良的巨大磁阻抗材料,磁畴结构观察表明,样品中心为均匀的细条畴靠近边缘,磁畴方向转向横向,这种畴结构有利于磁力线的闭合,是获得显著的巨阻抗效应的重要原因之一,磁阻抗测量表明,样品在１３ＭＨＺ的频率下,分别获得了６３％和７％的纵向和横向磁阻抗比.
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