OALib Journal期刊
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温度对电沉积纳米孪晶Ni显微结构及纳米压痕力学性能的影响
DOI: 10.3724/SP.J.1037.2012.00241, PP. 1342-1348
Keywords: 电沉积,纳米孪晶Ni,显微结构,纳米压痕硬度
Abstract:
在镀液成分、pH值、沉积电流密度和脉冲占空比等工艺参数不变的条件下,利用脉冲电沉积技术在镀液温度分别为30,50和80℃时制备了包含高密度纳米孪晶片层结构的纳米晶Ni薄膜.利用SEM,XRD和TEM研究了镀液温度对纳米孪晶Ni薄膜的沉积速率、择优取向、晶粒尺寸、孪晶片层特征尺寸(长度和厚度)以及生长规律的影响;利用HRTEM揭示了纳米孪晶Ni的孪晶界面微观结构特征,利用纳米压痕技术研究了温度对Ni薄膜纳米压痕硬度的影响.研究结果表明脉冲电沉积纳米孪晶Ni薄膜的生长速率在20-30nm/s之间,镀液温度为30和50℃时Ni薄膜沿(220)面择优生长,80℃时转变为沿(200)面择优生长;随着镀液温度的升高,Ni薄膜的平均晶粒尺寸由900nm减小到300nm,晶粒内部孪晶片层的厚度由60nm降低到28nm;50℃时纳米孪晶Ni薄膜的纳米压痕硬度平均值最高,达3.75GPa.
References
[1] | (张跃飞, 成宇浩, 韩晓东, 张泽. 中国专利, 201220267938.6, 2011)
|
[2] | Cheng Y H, Zhang Y F, Mao S C, Han X D, Zhang Z. J Chin Electro Microsc Soc , 2011; (Suppl): 45
|
[3] | (成宇浩, 张跃飞, 毛圣成, 韩晓东, 张泽. 电子显微学报, 2011; (增刊): 45)
|
[4] | Zhang X, Wang H, Chen y H, Lu L, Lu K, Hoagland R G, Misra A. Appl Phys Lett, 2006; 88: 173116
|
[5] | Anderoglu O, Misra A, Wang H, Ronning F, Hundley M F, Zhang X. Appl Phys Lett, 2008; 93: 083108
|
[6] | Yan F, Zhang H W, Tao N R, Lu K. J Mater Sci Technol, 2011; 27: 673
|
[7] | Hong C S, Tao N R, Huang X, Lu K. Acta Mater, 2010; 58: 3103
|
[8] | Saitou M, Oshiro S, Asadul H S M. J Appl Electrochem, 2008; 38: 309
|
[9] | Bicelli L P, Bozzini B, Mele C, D乫Urzo L. Int J Electrochem Sci, 2008; 3: 356
|
[10] | Fleischmann M, Thirsk H R. Electrochim Acta, 1959; 1: 146
|
[11] | Boubatra M, Azizi A, Schmerber G, Dinia A. Ionics, 2012; 15: 425
|
[12] | Boubatra M, Azizi A, Schmerber G, Dinia A. J Mater Sci.Mater Electron, 2011; 22: 1804
|
[13] | Swygenhoven H V, Derlet P M, Fr冇seth A G. Nat Mater, 2004; 3: 399
|
[14] | Idrissi H, Wang B, Colla M S, Raskin J P, Schryvers D, Pardoen T. Adv Mater, 2011; 23: 2119
|
[15] | Zhu T, Gao H. Scr Mater, 2012; 66: 843
|
[16] | Christian J W, Mahajan S. Prog Mater Sci, 1995; 39: 1
|
[17] | Lu L, Shen Y F, Chen X H, Qian L H, Lu K. Science, 2004; 304: 422
|
[18] | Shen Y F, Lu L, Lu Q H, Jin Z H, Lu K. Scr Mater, 2005; 52: 989
|
[19] | Lu L, Chen X, Huang X, Lu K. Science, 2009; 323: 30
|
[20] | Li X Y, Wei Y J, Lu L, Lu K, Gao H J. Nature, 2010; 464: 877
|
[21] | Lu K, Lu L, Suresh S. Science, 2009; 324: 349
|
[22] | Lu L, Lu K. Acta Metall Sin, 2010; 46: 1422
|
[23] | (卢磊, 卢柯. 金属学报, 2010; 46: 1422)
|
[24] | Zhang Y F, Cheng Y H, Han X D, Zhang Z. Chin Pat, 201220267938.6, 2011
|
[25] | Tao N R, Lu K. J Mater Sci Technol, 2007; 23: 771
|
[26] | Tu Z M, Li N, Hu H L, Cao L X. Electrodeposited Nanocrystalline Material Technology. Beijing: National Defense Industry Press, 2008: 66
|
[27] | (屠振密, 李宁, 胡会利, 曹立新. 电沉积纳米晶体材料技术. 北京: 国防工业出版社, 2008: 66)
|
[28] | Chen T Y. Nickel Plating Fault Handling and Examples. Beijing: Chemical Industry Press, 2010: 4
|
[29] | (陈天玉. 镀镍故障处理及实例. 北京: 化学工业出版社, 2010: 4)
|
[30] | Peng X, Yan J, Xu C. Metall Mater Trans, 2008; 39A: 119
|
[31] | Motoyama M, Fukunaka Y, Sakka T, Ogata Y H. J Electrochem Soc, 2006; 153: C502
|
[32] | Lucadamo G, Medlin D L, Yang N Y C, Kelly J J, Talin A A. Philos Mag, 2005; 85: 2549
|
[33] | El.Sherik A M, Erb U. J Mater Sci, 1995; 30: 5743
|
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