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金属学报  1981 

用正电子湮灭技术研究裂纹顶端塑性区

, PP. 677-681

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Abstract:

正电子湮灭技术对材料的空位、位错等缺陷均十分灵敏,已广泛用于研究点阵缺陷及有关问题。由于塑性区内部塑性变形不均匀,故其内部缺陷密度分布亦是不均匀的,可能导致不均匀的正电子湮灭效应。本文尝试用正电子湮灭技术研究裂纹顶端塑性

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