|
OALib Journal期刊
ISSN: 2333-9721
费用：99美元
|
|
|
|
GaN场发射高分辨电子显微像的图像处理-显示GaN中原子分辨率晶体缺陷的可能性
, PP. 589-592
Keywords: GaN,晶体缺陷,高分辨电子显微学
Abstract:
本文介绍了场发射高分辨电子显微像的图像处理原理,用300kV场发射电子显微镜的参数模拟了GaN完整晶体和缺陷晶体结构模型的显微像.经过处理的显微像上能够分辨间距为0.112nm的Ga和N原子,并能显示N原子空位.
| [1] | Thon F. Electron Microscopy in Materials Science. New York: Academic Press, 1971:570e
|
| [2] | NNakamura S, Mukai T. Senoh M. Appl Phys Lett, 1994; 64: 1687
|
| [3] | Lester S D, Ponce F A, Craford M G, Steigerwald D A. Appl Phys Lett, 1995; 66:1249
|
| [4] | Ichinose H. International Kunming Symposium on Microscopy, 2000:11
|
| [5] | Scherzer O. J Appl Phys, 1949; 20: 20
|
| [6] | HHe W Z, Li F H, Chen H, Kawasaki K. Oikawa T. Ultra-microscopy, 1997; 70: 1
|
| [7] | Li F H, Wang D, He W Z. Jiang H. J Electron Microsc, 2000; 49: 17
|
| [8] | Wang D, Li F H, Zou J. Ultramicroscopy, 2000; 85:131
|
| [9] | Wang D, Chen H, Li F H, Kawasaki K, Oikawa T. Ultra-microscopy. 2002; in press
|
| [10] | Li F H, Tang D. Acta Cryst. 1985; A41: 376
|
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|
