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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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低能离子束辅照对溅射镀TiN膜生长的影响
, PP. 1087-1090
Keywords: TiN薄膜,物理气相沉积(PVD),择优取向
Abstract:
用诱导型等离子体辅助磁控溅射装置在Si(100)表面低温沉积TiN膜,研究了高密度低能量(≈20eV)离子束辅照对溅射镀TiN膜生长、结构和性能的影响。结果表明,高密度低能离子束辅照会改变TiN膜的择优生长方向并使薄膜致密化。即使沉积温度低于150℃,当入射基板离子数和Ti原子数的比值J/JTi≥4.7时,沉积的TiN膜仍可具有完全的(200)面择优生长,薄膜微观结构致密,硬度达到25GPa,残余压应力小。
| [1] | Chun J S, Petrov I, Greene J E. J Appl Phys, 1999; 86:3633
|
| [2] | Greene J E, Sundgren J E, Hultman L, Petrov L,Bergstrom D B. Appl Phys Lett, 1995; 67: 2928
|
| [3] | Kamminga J D, De Keijser Th H, Delhez R, Mittemeijier E J. Thin Solid Films, 1998; 317: 169
|
| [4] | Kamminga J D, De Keijser Th H, Delhez R, Mittemeijier E J. J Appl Phys, 2000; 88: 6332
|
| [5] | Otano-Rivera W, Pilione L J, Zapien J A, Messier R. J Vac Sci Technol, 1998; A16: 1331'
|
| [6] | Lim J, Park H S, Park T H, Lee J J. J Vac Sci Technol,2000; A18: 524
|
| [7] | Hultman L, Hakansson G, Wahlstrom U, Sundgen J E,Petrov I, Adibi F, Greene J E. Thin Solid Films, 1991;205: 153
|
| [8] | Li Z G, Miyake S, Mori M. Jpn J Appl Phys, 2003; 42:7086
|
| [9] | Adibi F, Petrov I, Greene J E, Hultman L, Sundgren J E.J Appl Phys, 1993; 73: 8580
|
| [10] | Groudeva Z S, Kaltofen R, Sebald T. Surf Coat Technol, 2000; 127: 144
|
| [11] | Banerjee R, Chandra R, Ayyub P. Thin Solid Films, 2002;405: 64
|
| [12] | Karlsson L, Hultman L, Johansson M P, Sundgren J E,Ljungcrantz H. Surf Coat Technol, 2000; 126: 1
|
| [13] | Pelleg J, Zevin L Z, Lungo S, Croitoru N. Thin Solid Films, 1991; 197: 117
|
| [14] | Petrov L, Hultman L, Helmersson U, Sundgren J E, Greene J E. Thin Solid Films, 1989; 169: 299
|
| [15] | Hultman L, Sundgren J E, Greene J E, Bergstrom D B,Petrove I. J Appl Phys, 1995; 78: 5395
|
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