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图案化TiO2薄膜的制备技术
, PP. 1659-1665
Keywords: 图案化,TiO2膜,写蚀,自组装,光刻胶,光敏膜,软刻蚀,微接触印刷
Abstract:
本文综述了图案化TiO2薄膜的制备技术,按图案的生成方式可分为图案的直接生成,掩膜复制法,硬质模板复制法三大类。可以通过针尖写蚀法、电子书写蚀法、激光写蚀法、自组装法、光电化学法直接制备图案。掩膜复制法包括光刻胶法、自组装膜法、光敏凝胶膜法等。硬质模板法也称软刻蚀技术,分为复制微模塑、转移微模塑、毛细管微模塑、微接触印刷法、光-盖印印刷等技术。对每类方法的优缺点作了适当评述,对今后图案化TiO2薄膜制备的研究方向提出了一些建议。
References
[1] | [2 ] Briceno G, Chang H Y, Sun X D, etal.Science, 1995 ,270: 273 —275
|
[2] | [4 ] Johnson T J, Ross D, Gaitan M, etal.Analytical Chemistry,2001 ,73: 3656 —3661
|
[3] | [8 ] Chen X, Mao S S.Chemical Reviews,2007 ,107: 2891 —2959
|
[4] | [9 ] Geissler M, Xia Y N.Adv.Mater.,2004 ,16: 1249 —1269
|
[5] | [13 ] Mitchell W J, Hu E L.Appl.Phys.Lett.,1999 ,74: 1916 —1918
|
[6] | [14 ] Mitchell W J, Hu E L.J.Vac.Sci.Technol.B,1999 ,17: 1622 —1626
|
[7] | [20 ] Gorbunov A A, Pompe W,Eichler H, etal.J.Am.Ceram.Soc.,1997 ,80: 1663 —1667
|
[8] | [23 ] Sakata H, Chakraborty S, Yokoyama E,etal.Appl.Phys.Lett.,2005 ,86: art.no.14104
|
[9] | [25 ] Passinger S, Saifullah MS M, Reinhardt C, etal.Adv.Mater.,2007 ,19: 1218 —1221
|
[10] | [29 ] Michel R, Reviakine I, Sutherland D S, etal.Langmuir,2002 ,18: 8580 —8586
|
[11] | [31 ] Yang P D, Zhao D Y, Margolese D I, etal.Nature,1998 ,396: 152 —155
|
[12] | [32 ] Fisher A, Kuemmel M, Jarn M, etal.Small,2006 ,2: 569 —574
|
[13] | [33 ] Liu M X, Gan L H, Chen G, etal.ChineseChem.Lett.,2006 ,17: 1085 —1088
|
[14] | [35 ] Chauvy P F, Madore C, Landolt D.Electrochem.Solid State Lett.,1999 ,2: 123 —125
|
[15] | [36 ] Michel R, Lussi J W, Csucs G, etal.Langmuir,2002 ,18: 3281 —3287
|
[16] | [38 ] Ozawa N, Yabe H, Yao T.J.Am.Ceram.Soc.,2003 ,86: 1976 —1978
|
[17] | [41 ] Kanta A, Sedev R, Ralston J.Langmuir,2005 ,21: 5790 —5794
|
[18] | [46 ] Masuda Y, Seo W S, Koumoto K.Langmuir,2001 ,17: 4876 —4880
|
[19] | [47 ] Kang B C, Lee J H,Chae H Y, etal.J.Vac.Sci.Technol.B,2003 ,21: 1773 —1776
|
[20] | [48 ] Lee J P, Kim H K,Park C R, etal.J.Phys.Chem.B,2003 ,107: 8997 —9002
|
[21] | [51 ] Koumoto K,Seo S,Sugiyama T, etal.Chem.Mater.,1999 ,11: 2305 —2309
|
[22] | [52 ] Gao Y F, Masuda Y, Koumoto K.Chem.Mater.,2004 ,16: 1062 —1067
|
[23] | [54 ] Xiang J H, Masuda Y, Koumoto K.Adv.Mater.,2004 ,16: 1461 —1464
|
[24] | [55 ] Xiang J H, Zhu P X, Masuda Y, etal.Langmuir,2004 ,20: 3278 —3283
|
[25] | [57 ] Masuda Y, Seo W S, Koumoto K.Solid State Ionics,2004 ,172: 283 —288
|
[26] | [60 ] Akamatsu K, Kimura A, Matsubara H, etal.Langmuir 2005 ,21: 8099 —8102
|
[27] | [64 ] Tohge N, Shinmou K, Minami T.SPIE Sol-Gel Optics Ⅲ,1994 ,2288: 589 —598
|
[28] | [67 ] Imao T, Hazama D, Noma N, etal.J.Ceram.Soc.Jap.,2006 ,114: 238 —240
|
[29] | [68 ] Segawa H, Adachi S, Arai Y, etal.J.Am.Ceram.Soc.,2003 ,86: 761 —764
|
[30] | [70 ] Segawa H, Tateishi K, Arai Y,etal.ThinSolidFilms,2004 ,466: 48 —53
|
[31] | [72 ] Ohya T, Nakayama A, Ban T,etal.Bull.Chem.Soc.Jap.,2003 ,76: 429 —435
|
[32] | [76 ] 刘建平(Liu J P ) , 何平笙(He P S ) . 化学物理学报(Chinese J. Chem. Phys. ) ,2004 ,17: 215 —218
|
[33] | [79 ] Yang P D, Rizvi A H, Messer B, etal.Adv.Mater.,2001 ,13: 427 —431
|
[34] | [80 ] Bartz M, Terfort A, Knoll W,etal.Chem.Eur.J.,2000 ,6: 4149 —4153
|
[35] | [82 ] Tokuhisa H, Hammond P T.Langmuir,2004 ,20: 1436 —1441
|
[36] | [84 ] Seo E K, Lee J W, Sung-Suh H M, etal.Chem. Mater.,2004 ,16: 1878 —1883
|
[37] | [85 ] Chen D, Gao Y F, Wang G, etal.J.Phys.Chem.C,2007 ,111: 13163 —13169
|
[38] | [86 ] Wang M T, Braun H G, Meyer E.Chem.Mater.,2002 ,14:4812 —4818
|
[39] | [87 ] Cherniavskaya O, Adzic A, Knutson C, etal.Langmuir,2002 ,18: 7029 —7034
|
[40] | [91 ] Liang S,Chen M, Xue Q, etal.Thin Solid Films,2008 ,516:3058 —3061
|
[41] | [92 ] 张瑞(Zhang R) , 陈淼(Chen M) , 薛群基(Xue Q J ) 等. 高等学校化学报(Chem.J.Chin.Univ. ) ,2005 ,26: 939 —941
|
[42] | [49 ] Masuda Y,Sugiyama T,Lin H,etal.Thin Solid Films,2001 ,382: 153 —157
|
[43] | [50 ] Masuda Y,Jinbo Y, Yonezawa T, etal.Chem.Mater.,2002 ,14: 1236 —1241
|
[44] | [53 ] Masuda Y, Sugiyama T, Koumoto K.J.Mater.Chem.,2002 ,12: 2643 —2647
|
[45] | [56 ] Masuda Y, Ieda S, Koumoto K.Langmuir,2003 ,19: 4415 —4419
|
[46] | [58 ] Masuda Y, Saito N, Hoffmann R,etal.Sci.Technol.Adv.Mater.,2003 ,4: 461 —467
|
[47] | [59 ] Collins R J, Shin H, De Guire M R,etal.Appl.Phys.Lett.,1996 ,69: 860 —862
|
[48] | [61 ] Liang S, Chen M, Xue Q,etal.J. Colloid Interface Sci.,2007 ,311: 194 —202
|
[49] | [62 ] Park O H, Cheng J Y, Kim H S, etal.Appl.Phys.Lett.,2007 ,90:art.no.33102
|
[50] | [63 ] Tohge N, Shinmou K, Minaml I.J.Sol-GelSci.Technol.,1994 ,2: 581 —582
|
[51] | [65 ] Tohge N, Zhao G, Chiba F.Thin Solid Films,1999 ,351: 85 —90
|
[52] | [66 ] Imao T, Horiuchi T, Noma N, etal.J.Sol-GelSci.Technol.,2006 ,39: 119 —122
|
[53] | [69 ] Que W X, Hu X, Zhang Q Y.Chem.Phys.Lett.,2003 ,369: 354 —360
|
[54] | [71 ] Kikuta K, Takagi K, Hirano S.J.Am.Ceram.Soc.,1999 ,82: 1569 —1572
|
[55] | [73 ] Zhang H, Lee Y Y, Leck K J, etal.Langmuir,2007 ,23:4728 —4731
|
[56] | [74 ] 管飞( Guan F ) , 陈淼( Chen M ) , 张瑞( Zhang R ) 等. 高等学校化学报(Chem.J.Chin.Univ. ) ,2005 ,26: 599 —602
|
[57] | [75 ] Yang P,Yang M,Zou S L,etal.J.Am.Chem.Soc.,2007 ,129: 1541 —1552
|
[58] | [77 ] Zhao F, Xie Y, Xu S,etal.Tech.Phys.Lett.,2006 ,32: 232 —237
|
[59] | [78 ] Yang P D, Deng T, Zhao D Y, etal.Science,1998 ,282: 2244 —2246
|
[60] | [81 ] Tokuhisa H, Hammond P T.Adv.Funct.Mater.,2003 ,13: 831 —839
|
[61] | [83 ] Park M H, Jang Y J, Sung-Suh H M, etal.Langmuir,2004 ,20: 2257 —2260
|
[62] | [88 ] Park K S, Seo E K, Do Y R, etal. J. Am. Chem. Soc.,2006 ,128: 858 —865
|
[63] | [89 ] Hattori A, Tokihisa Y, Tada H, etal.J.Sol-GelSci.Technol.,2001 ,22: 53 —61
|
[64] | [90 ] FranciosoL, SicilianoP. Nanotechnology, 2006 ,17:3761 —3767
|
[65] | [1 ] 沈家骢( Shen J C ) , 超分子层状结构———组装与功能(Structuresof Layered Supermolecules: Assemblingand Function) ,北京: 科学出版社(Beijing: Science Press ) ,2003 .199 —202
|
[66] | [3 ] Clark R A, Hietpas P B, Ewing A G.Analytical Chemistry,1997 ,69: 259 —263
|
[67] | [5 ] Lee S S, Lin L Y, Wu M C.Applied Physics Letters,1995 ,67: 2135 —2137
|
[68] | [6 ] Pirrung M C.Angewandte Chemie International Edition,2002 ,41: 1277 —1289
|
[69] | [7 ] Song M I, Iwata K, Yamada M, etal.Analytical Chemistry,1994 ,66: 778 —781
|
[70] | [10 ] Xia Y N, Rogers J A, Paul K E, etal.Chem.Rev.,1999 ,99: 1823 —1848
|
[71] | [11 ] Huh C, Park S J.J.Vac.Sci.Technol.B,2000 ,18: 55 —59
|
[72] | [12 ] Rolandi M, Suez I, Dai H J, etal.NanoLett.,2004 ,4: 889 —893
|
[73] | [15 ] Wu C W, Aoki T, Kuwabara M.Nanotechnology,2004 ,15: 1886 —1889
|
[74] | [16 ] Kern P, Muller Y, Patscheider J,etal.J.Phys.Chem.B,2006 ,110: 23660 —23668
|
[75] | [17 ] Kern P, Widmer R, Gasser? P,etal.J.Phys.Chem.C,2007 ,111: 13972 —13980
|
[76] | [18 ] Saifullah M S M, Subramanian K R V, Tapley E,etal.Nano Lett.,2003 ,3: 1587 —1591
|
[77] | [19 ] Gorbunov A A, Eichler H, Pompe W.Appl.Phys.Lett.,1996 ,69: 2816 —2818
|
[78] | [21 ] Boyd D A, Greengard L, Brongersma M, etal.NanoLett.,2006 ,6: 2592 —2597
|
[79] | [22 ] Watanabe T, Yoshimura M.Thin Solid Films,2006 ,515: 2696 —2699
|
[80] | [24 ] Kim M,Kang B,Yang S Z, etal.Adv.Mater.,2006 ,18: 1622 —1626
|
[81] | [26 ] Segawa H, Misawa H, Yano T,etal.Photon Processingin Microelectronicsand Photonics V ( eds.Okada T, Arnold C, Meunier M, etal. ) .San Jose:SPIE,2006 .61060N
|
[82] | [27 ] An X H, Meng G W, Wei Q, etal.J.Phys.Chem.B,2006 ,110: 222 —226
|
[83] | [28 ] Denis F A, Hanarp P, Sutherland D S, etal.Langmuir,2004 ,20: 9335 —9339
|
[84] | [30 ] Skupinski M, Sanz R, Jensen J. Nucl.Instrum.Methods Phys.Res.,Sect.B,2007 ,257: 777 —781
|
[85] | [34 ] Nakanishi S, Tanaka T, Saji Y,etal.J.Phys.Chem.C,2007 ,111: 3934 —3937
|
[86] | [37 ] Ozawa N, Yao T.Solid State Ionics,2002 ,151: 79 —87
|
[87] | [39 ] Lee G J, Lee Y,Kim K R, etal.J.Korean Phys.Soc.,2006 ,49: S716 —S720
|
[88] | [40 ] Kanta A, Sedev R, Ralston J.Colloids Surf.A,2007 ,292: 1 —7
|
[89] | [42 ] Stevens N, Priest C I, Sedev R,etal.Langmuir,2003 ,19: 3272 —3275
|
[90] | [43 ] Zuruzi A S, MacDonald N C.Adv.Funct.Mater.,2005 ,15: 396 —402
|
[91] | [44 ] Kuo C Y, Lu S Y.J.Am.Ceram.Soc.,2007 ,90: 1956 —1958
|
[92] | [45 ] Voicu N E, Saifullah M S M, Subramanian K R V, etal.Soft Matter,2007 ,3: 554 —557
|
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