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科技导报  2014 

全化学溶液法制备SrTiO3缓冲层

DOI: 10.3981/j.issn.1000-7857.2014.25.004, PP. 32-35

Keywords: 化学溶液法,缓冲层,种子层

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Abstract:

化学法制备SrTiO3薄膜成本低、效率高,适合用于YBa2Cu3O7-δ(YBCO)涂层导体的缓冲层。采用全化学溶液沉积法在Ni-5W金属基带上外延生长了SrTiO3(STO)缓冲层薄膜。以乙酸盐、钛酸丁酯为原料配制均匀稳定的STO种子层、LaxSr1-xTiO3种子层和STO缓冲层前驱溶液。研究了STO种子层薄膜厚度对在STO/Ni-5W(200)上沉积STO外延薄膜性能的影响,结果表明,在880℃烧结温度下制备的3层STO种子层上可以制备出表面光滑平整、具有(200)择优取向的STO缓冲层。尝试将La元素掺入STO中制得稳定的LSTO前驱液,在LSTO/Ni-5W结构上制备了具有(200)择优取向的STO缓冲层薄膜,可作为YBa2Cu3O7-δ涂层导体的缓冲层。

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