Hu Zhiyuan, Liu Zhangli, Shao Hua, et al. Comprehensive study on the total dose effects in a 180nm CMOS technology[J]. IEEE Trans on Nucl Sci, 2011,58(3):1347-1354.
[2]
DasGupta S, Witulski A F, Bhuva B L, et al. Effect of well and substrate potential modulation on single event pulse shape in deep submicro CMOS[J]. IEEE Trans on Nucl Sci, 2007,54(6):2407-2412.
[3]
Loveless T D, Massengill L W, Holman W T, et al. Modeling and mitigating single-events in voltage-controlled oscillators[J]. IEEE Trans on Nucl Sci, 2007,54(6):2561-2567.
[4]
Boulghassoul Y, Buchner S, McMorrow D, et al. Investigation of millisecond-log analog single-event transients in the LM6144 op amp[J]. IEEE Trans on Nucl Sci, 2004,51(6):3529-3536.
[5]
Kruckmeyer K, Rennie R L, Ramachandran V. Use of code error and beat frequency test method to identify single envent upset sensitive circuit in a 1GHz analog to digital converter[J]. IEEE Trans on Nucl Sci, 2008,55(4):2013-2018.
[6]
Blaine R W, Armstrong S E, Kauppila J S, et al. RHBD bias circuit utilizing sensitive node active charge cancellation[J]. IEEE Trans on Nucl Sci, 2011,58(6):3060-3066.
[7]
Kauppila J S, Sternberg A L, Alles M L, et al. A bias-dependent single-event compact model implemented into BISM4 and a 90nm CMOS process design kit[J]. IEEE Trans on Nucl Sci, 2009,56(6):3152-3157.
