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电化学 1999

硅基多孔氧化铝膜的AES多层结构分析和生长过程研究

, PP. 389-394

Keywords: 阳极氧化,硅基多孔氧化铝,AES,多层结构

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Abstract:

将电子束蒸发在硅衬底（Ｐ型，〈１００〉晶向，０－５Ω·ｃｍ）上厚度４００ｎｍ、纯度９９－９９％的铝膜，浸入具有中等溶解能力的１５ｗｔ％Ｈ２ＳＯ４中，ＤＣ恒压６０Ｖ、恒温０℃条件下，进行多孔型过度阳极氧化处理，从而在Ｓｉ基上得到包含空隙层的多孔氧化铝膜．通过对样品ＴＥＭ平面形貌、ＳＥＭ横断面形貌观察以及ＡＥＳ深度剖析，研究了样品的多层结构，并初步讨论了由此揭示出的硅基多孔氧化铝膜的生长过程

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