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兵工学报  2012 

抛光垫提高化学机械抛光接触压强分布均匀性研究

, PP. 617-622

Keywords: 机械制造工艺与设备,抛光,单晶硅片,接触压强,葵花籽粒分布,Winkler地基

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Abstract:

?为了改善单晶硅片化学机械抛光(CMP)接触压强分布的均匀性和实现高平坦化抛光,基于弹性力学的“Winkler地基”理论提出了一个新的CMP接触模型。依据此模型,从葵花籽粒分布的结构特征出发对抛光垫进行了分割,计算分析了分割参数对接触压强分布的影响规律,并实验验证了分割参数对硅片抛光平面度轮廓的影响规律。研究结果表明:当分割参数为顺时针0.008~0.009mm,逆时针为0.005~0.006mm时,抛光接触压强分布较为均匀,并使得被抛光晶片的平面度得到改善。

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