Yang Shaoyong,Xiang Dawei,Bryant A,et al．Condition monitoring for device reliability in power electronic converters：A review[J]．IEEE Transactions on Power Electronics,2010,25(11)：2734-2752．
[2]
Hung Tuanyu,Liao Liling,Wang C C,et al．Life prediction of high-cycle fatigue in aluminum bonding wires under power cycling test[J]．IEEE Transactions on Device and Materials Reliability,2014,14(1)：484-492．
[3]
Mei Yunhui,Lian Jiaoyuan,Chen Xu,et al．Thermo-mechanical reliability of double-sided IGBT assembly bonded by sintered nanosilver[J]．IEEE Transactions on Device and Materials Reliability,2014,14(1)：194-202．
[4]
Li Y,Agyakwa P A,Johnson C M．Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules[J]．IEEE Transactions on Device and Materials Reliability,2013,13(1)：9-17．
[5]
Darveaux,R．Effect of simulation methodology on solder joint crack growth correlation[C]// Electronic Components & Technology Conference．Las Vegas：IEEE,2000：1048-1058．
[6]
Jian Z,Changzhi L,Xiaoling Z,et al．FEM-based thermal analysis of IGBT．in Microelectronics and Electronics (PrimeAsia)[C]// 2010 Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics．Shanghai：IEEE,2010：321-324．
[7]
Khatir Z,Lefebvre S．Thermal analysis of power cycling effects on high power IGBT modules by the boundary element method[C]//Seventeenth Annual IEEE Symposium in Semiconductor Thermal Measurement and Management．San Jose：IEEE,2001：27-34．
[8]
李庆民,徐国政,钱家骊,等．大功率GTO等效传热模型的研究[J]．中国电机工程学报,2000,20(1)：19-22． Li Qingmin,Xu Guozheng,Qian Jiali,et al．Investigation on the equivalent heat transfer model of large capacity GTO[J]．Proceedings of the CSEE,2000,20(1)：19-22(in Chinese)．
[9]
陈如清．基于新型粒子群算法的电力电子装置在线故障诊断方法[J]．中国电机工程学报,2008,28(24)：70-74． Chen Ruqing．A novel PSO based on-line fault diagnosis approach for power electronic system[J]．Proceedings of the CSEE,2008,28(24)：70-74(in Chinese)．
[10]
Nielsen R O,Due J,Munk-Nielsen S．Innovative measuring system for wear-out indication of high power IGBT modules[C]//Energy Conversion Congress and Exposition (ECCE)．Phoenix：IEEE,2011：1785-1790．
[11]
Huang Hui,Mawby P A．A lifetime estimation technique for voltage source inverters[J]．IEEE Transactions on Power Electronics,2013,28(8)：4113-4119．
[12]
杨珍贵,周雒维,杜雄,等．基于器件的结温变化评估风机中参数差异对网侧变流器可靠性的影响[J]．中国电机工程学报,2013,33(30)：41-49． Yang Zhengui,Zhou Luowei,Du Xiong,et al．Effects of different parameters on reliability of grid-side converters based on varied junction temperature of devices in wind turbines[J]．Proceedings of the CSEE,2013,33(30)：41-49(in Chinese)．
[13]
Ma K,Liserre M,Blaabjerg F,et al．Thermal loading and lifetime estimation for power device considering mission profiles in wind power converter[J]．IEEE Transactions on Power Electronics,2015：30(2)：590-602．
[14]
Dawei X,Li R,Tavner P,et al．Monitoring solder fatigue in a power module using case-above-ambient temperature rise[J]．IEEE Transactions on Industry Applications,2011,47(6)：2578-2591．
[15]
Bing J,Picker V,Wenping C,et al．In situ diagnostics and prognostics of wire bonding faults in IGBT modules for electric vehicle drives[J]．IEEE Transactions on Power Electronics,2013,28(12)：5568-5577．
[16]
Gachovska T K,Bo T,Hudgins J,et al．A real-time thermal model for monitoring of power semiconductor devices[C]//Energy Conversion Congress and Exposition (ECCE)．Denver：IEEE,2013：2208-2213．
[17]
McPherson J W．Reliability physics and engineering time- to-failure modeling[M]．New York：Springer,2010：5-12．
[18]
Wang H,Ma K,Blaabjerg F．Design for reliability of power electronic systems[C]//IECON 2012-38th Annual Conference on IEEE Industrial Electronics Society．Montreal：IEEE,2012：33-44．
[19]
Smet V,Forest F,Huselstein J,et al．Evaluation of Vce monitoring as a real-time method to estimate aging of bond wire-IGBT modules stressed by power cycling [J]．IEEE Transactions on Industrial Electronics,2013,60(7)：2760-2770．
[20]
Ghimire P,de Vega A R,Beczkowski S,et al．Improving power converter reliability：online monitoring of high- power IGBT modules[J]．IEEE Industrial Electronics Magazine,2014,8(3)：40-50．
[21]
Morozumi A,Yamada K,Miyasaka T,et al．Reliability of power cycling for IGBT power semiconductor modules[J]．IEEE Transactions on Industry Applications,2003,39(3)：665-671．
