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科学通报  2014 

超导磁通量子比特的制备及Al/AlOx/Al隧道结特性参数

DOI: 10.1360/N972014-00168, PP. 2728-2733

Keywords: 超导磁通量子比特,Al/AlOx/Al超导隧道结,静态氧化,透射电子显微镜分析,势垒层厚度,薄膜平整度,漏电比

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Abstract:

超导量子比特作为利用约瑟夫森结实现量子位的方案之一,具有易集成、易与外界耦合等优点.用双层光刻胶通过深紫外光曝光制备悬空掩膜结构,Al作为超导材料,采用电子束斜蒸发及静态氧化的方法制备了超导磁通量子比特样品.通过对Al薄膜厚度与平整度关系分析,选取60nm作为隧道结底层Al厚度,增加蒸发源到样品衬底间的距离,提高了Al薄膜平整度,降低了隧道结漏电流.通过透射电子显微镜分析,观测到Al隧道结三层结构,并得到了势垒层厚度和氧分压的关系.

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