1 Chen S L, Griffin P B, Plummer J D. IEEE Trans Electron Dev, 2009, 56: 634-640
[2]
2 Wu C Y, Lee C S. IEEE Electron Device Lett, 1983, 4: 78-80
[3]
3 Wu C Y, Wu C Y, Sheng H D. IEEE Electron Dev Lett, 1980, 1: 81-82
[4]
4 Wu C Y, Liu Y F. IEEE J Solid State Circ, 1983, 18: 222-224
[5]
6 Halupka D, Huda S, Song W, et al. In: Laura C, Fujino I, eds. IEEE International Solid-State Circuits Conference, 2010, Feb 7-11, San Francisco. Maine: Lisbon Falls, 2010. 256-258
[6]
8 Hickmott T W. J Appl Phys, 2008, 104: 103704
[7]
9 Hickmott T W. J Appl Phys, 2009, 106: 103719
[8]
14 郭维廉. 半导体杂志, 2005, 20: 34-43
[9]
15 郭维廉. 纳米器件与技术, 2006, 12: 564-571
[10]
5 Cheng X, Duane R. Electron Lett, 2006, 42: 338-390
[11]
7 Li Y F, Kaneko T, Hatakeyama R. J Appl Phys, 2009, 106: 124316
[12]
10 Chung S Y, Jin N, Berger P R, et al. Appl Phys Lett, 2004, 84: 2688-2690
[13]
11 Wu C Y, Wu C Y. IEE Proc Solid State Electron Dev, 1981, 128: 73-80
[14]
12 Russell D, Alan M, Ann C, et al. USA Patent, US 2001/0005327 A1, 2001-06-28
[15]
13 Rose G S, Stan M R. IEEE Trans Circ Syst Fund Theor Appl, 2007, 54: 2380-2390
