Khanna V K. The insulated gate bipolar transistor: IGBT theory and design[M]. Piscataway, N J: IEEE Press, 2003.
[2]
Bernet S. Recent developments of high power converters for industry and traction applications[J]. IEEE Transactions on Power Electronics, 2000, 15(6): 1102-1117.
[3]
Arai J, Iba K, Funabashi T, et al. Power electronics and its applications to renewable energy in Japan[J]. IEEE Circuits and Systems Magazine, 2008, 8(3): 52-66.
[4]
Chen Z, Guerrero J M, Blaabjerg F. A review of the state of the art of power electronics for wind turbines[J]. IEEE Transactions on Power Electronics, 2009, 24(8): 1859-1875.
Yang S, Bryant A, Mawby P, et al. An industry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451.
[7]
Mitic G, Beinert R, Klofac P, et al. Reliability of AlN substrates and their solder joints in IGBT power modules[J]. Microelectronics Reliability, 1999, 39(6): 1159-1164.
[8]
Onuki J, Koizumi M, Suwa M. Reliability of thick Al wire bonds in IGBT modules for traction motor drives[J]. IEEE Transactions on Advanced Packaging, 2000, 23(1): 108-112.
[9]
Ciappa M. Selected failure mechanisms of modern power modules[J]. Microelectronics Reliability, 2002, 42(4-5): 653-667.
Bin L, Sharma S K. A literature review of IGBT fault diagnostic and protection methods for power inverters[J]. IEEE Transactions on Industry Applica- tions, 2009, 45(5): 1770-1777.
[13]
Yu C, Yuan J S, Yang H. MOSFET linearity performance degradation subject to drain and gate voltage stress[J]. IEEE Transactions on Device and Materials Reliability, 2004, 4(4): 681-689.
[14]
Sheng W W, Colino R P. Power electronic modules: design and manufacture[M]. Boca Raton: CRC Press 2005.
[15]
Xing K, Lee F C, Boroyevich D. Extraction of parasitics within wire-bond IGBT modules[C]. Thirteath Annual Applied Power Electronics Conference and Exposition, Anaheim, 1998: 497-520.
[16]
Hefner A R, Diebolt D M. An experimentally verified IGBT model implemented in saber circuit simulator[J]. IEEE Transactions on Power Electronics, 1994, 9(5): 532-542.
Bouarroudj M, Khatir Z, Ousten J P, et al. Temperature-level effect on solder lifetime during thermal cycling of power modules[J]. IEEE Transactions on Device and Materials Reliability, 2008, 8(3): 471-477.
[24]
Xiong Y L, Cheng X, Shen Z J, et al. Prognostic and warning system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles[J]. IEEE Transactions on Industrial Electronics, 2008, 55(6): 2268-2276.
[25]
Patil N, Celaya J, Das D, et al. Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics[J]. IEEE Transactions on Reliability, 2009, 58(2): 271-276.
[26]
Musallam M, Johnson C M. Real-time compact thermal models for health management of power electronics[J]. IEEE Transactions on Power Electronics, 2010, 25(6): 1416-1425.
Tang M C, Fang Y K, Liao W S, et al. Investigation and modeling of hot carrier effects on performance of 45- and 55-nm NMOSFETs with RF automatic measurement[J]. IEEE Transactions on Electron Devices, 2008, 55(6): 1541-1546.
