OALib Journal期刊
ISSN: 2333-9721
费用:99美元
|
|
|
用气相沉积方法在低气压下制备BN的高压相:E-BN、c-BN、w-BN
DOI: 10.11858/gywlxb.2000.02.005, PP. 111-114
Keywords: E-BN,c-BN薄膜,相变,高压相材料
Abstract:
用射频磁控溅射方法得到了低应力立方氮化硼薄膜。红外光谱结果表明,薄膜具有很好的附着力,且含有少量的E-BN和w-BN。电子衍射谱表明薄膜表层是纯立方相。同时利用此方法得到了E-BN薄膜。认为在薄膜生长过程中可能经历了一个从E-BN到c-BN的相转变过程。
References
[1] | Olszyna A, Konwerska-Hrabowska J, Lisicki M. Diamond and Related Materials, 1997, 6: 617.
|
[2] | Mirkarimi P B, Mccarty K F, Medin D L. Mater Sci and Engn, 1997, R21: 472.
|
[3] | Mckenzi D R, McFall W D, Sainty W G, et al. Appl Phys Lett, 1995, 66: 287. ?
|
[4] | Reinke S, et al. Diamond and Related Materials, 1995, 4: 272.
|
[5] | Kester D J, Messier R. J Appl Phys, 1992, 72: 504.
|
[6] | Dworschak W, Jung K, Ehrhardt H. Thin Solid Filins, 1995, 254: 65.
|
[7] | Batzanov S S, Blochin G E, Deribas A A. J Struct Chem, 1965, 7: 209.
|
Full-Text
|
|
Contact Us
service@oalib.com QQ:3279437679 
WhatsApp +8615387084133
|
|