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高聚物P(EO)n-CuBr2薄膜在流体静高压下离子电导率和介电常数的提高(Ⅱ)——添加增塑剂方法的应用

DOI: 10.11858/gywlxb.2001.03.001, PP. 161-168

Keywords: 聚乙烯氧化物薄膜,静水压,离子电导率,介电常数,增塑剂

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Abstract:

选用分子量为500万的聚氧化乙烯和无水溴化铜,通过混溶蒸发法制备出一系列高聚物P(EO)n-CuBr2(n=4,8,12,16,24)薄膜,并在0.1~2443MPa范围不同的静水压下详细测量了它们的相对介电常数。分别探讨了增塑剂(C4H6O3)含量对室温常压下离子电导率和介电常数的影响,及其对高压下离子电导率和介电常数的影响。实验结果表明:P(EO)16-CuBr2薄膜在添加介电常数较高和本体粘度较低的增塑剂C4H6O3后,当其相对浓度nPC/ntotal=20%时,不仅使该薄膜的室温常压离子电导率明显提高6.8倍,而且使其在高压力下的离子电导率提高1(0.1~100MPa)至2(350~800MPa)个数量级,非常有利于在高压环境中应用。

References

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