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金刚石薄膜负偏压形核的边缘效应

DOI: 10.11858/gywlxb.2003.02.012, PP. 145-149

Keywords: MPCVD,形核,金刚石膜,边缘效应

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Abstract:

在微波等离子体化学气相沉积装置中,研究了金刚石薄膜在Si(100)面上的负偏压形核行为,结果表明,偏压大小对金刚石的形核均匀性有显著影响,而甲烷浓度主要影响形核时间,对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时,形核行为存在明显的边缘效应,即在偏压值低于-150V时,硅片边缘金刚石核密度急剧降低,远低于硅片中央;在甲烷浓度比较低时,硅片边缘核密度要高于中间。研究表明,造成这种现象的主要原因是硅片下的钼支撑架发射电子所致,过量的原子H对金刚石的形核是不利的。

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