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InAs晶体二维自旋磁极化子自陷能的磁温效应

DOI: 10.11858/gywlxb.2005.01.009, PP. 45-50

Keywords: 弱耦合,自旋,自陷能,磁场效应,高温高压效应

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Abstract:

在同时考虑磁场和高温高压的情况下,应用么正变换和线性组合算符法,研究了电子自旋对弱耦合二维磁极化子自陷能的影响。对InAs半导体所作的数值计算结果表明,不同方向的电子自旋使弱耦合二维磁极化子的自陷能分裂为二。分裂的程度随磁场的加强而加剧。随着磁场或温度的增加,磁极化子的自陷能减小而电子自旋能量与磁极化子自陷能之比增大。当磁场足够强或温度足够高时,电子自旋能量与磁极化子自陷能之比是很大的。

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