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纳米SiO2形成柯石英的p-T相图

DOI: 10.11858/gywlxb.2009.01.002, PP. 9-16

Keywords: 纳米二氧化硅,&alpha,-石英,柯石英,高压高温,硅羟基

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Abstract:

使用纳米SiO2粉体为原料,在2.0~4.2GPa、150~1200℃范围内进行了一系列的高压高温实验研究,得到了该压力温度范围内晶化产物α-石英与柯石英的p-T相图,而且该相图中的相边界在650℃以下斜率为负,在650℃以上基本水平。通过X射线衍射仪(XRD)、Raman光谱仪(Raman)、傅立叶红外光谱仪(FT-IR)、DSC-TGA差热分析仪(TG-DTA)-等表征手段,发现纳米SiO2原粉中水分(包含Si-OH和吸附水)的存在能显著降低合成柯石英的温度和时间,在4.2GPa压力下得到了目前合成柯石英的最低温度190℃。常压下,合成的柯石英在800℃以下能够稳定存在,在1000℃以上转化为α-方石英。

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