Mukai K, Nakata Y, Otsubo K, et al. 1.3μm CW lasing characteristics of self-assembled InGaAs/GaAs quantum dots[J]. IEEE J Quantum Electron, 2000, 36(4): 472.
[2]
Mikhrin S S, Kovsh A R, Krestnikov I L, et al. High power temperature-insensitive 1.3μm InAs/InGaAs/GaAs quantumdot lasers[J]. Semicond Sci Technol, 2005, 20(5): 340-342.
[3]
Tatebayashi J, Hatori N, Ishida M, et al. 1.28μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metal-organic chemical vapor deposition[J]. Appl Phys Lett, 2005, 86(5): 053107.
[4]
Nuntawong N, Xin Y C, Birudavolu S, et al. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition [J]. Appl Phys Lett, 2005, 86(19): 193115.
[5]
Lin C H, Pai W W, Chang F Y, et al. Comparative study of InAs quantum dots with different InGaAs capping methods[J]. Appl Phys Lett, 2007, 90(6): 063102.
[6]
Robach R, Schulz W M, Reischle M, et al. Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature[J]. J Crys Growth, 2008, 310(23): 5089.
[7]
Tatebayashi J, Nuntawong N, Xin Y C, et al. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition[J]. Appl Phys Lett, 2006, 88(22): 221107.
[8]
Zhang W, Uesugi K, Suemune I. The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots[J]. J Appl Phys, 2006, 99(10): 103103.
[9]
Suzuki R, Miyamoto T, Sengoku T, et al. Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer[J]. Appl Phys Lett, 2008, 92(14): 141110.
[10]
Henini M. Dilute nitride semiconductors[M]. London: Elsevier Ltd, 2005: 3.
[11]
Kunert R, Schll E. Strain-controlled correlation effects in self-assembled quantum dot stacks[J]. Appl Phys Lett, 2006, 89(15): 153103.
[12]
Penev E, Kratzer P, Sheffler M. Effect of strain on surface diffusion in semiconductor heteroepitaxy[J]. Phys Rev B, 2001, 64(8): 085401.
[13]
Oshima R, Takata A, Okada Y. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells[J]. Appl Phys Lett, 2008, 93(8): 083111.
