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利用片上超材料构建单芯片太赫兹双频吸波器

DOI: 10.13190/j.jbupt.2015.03.022, PP. 126-129

Keywords: 超材料,开口谐振环,太赫兹吸波器,等效电路,吸收率

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Abstract:

利用65nm互补金属氧化物半导体(CMOS)工艺,设计了一种新的单芯片超材料结构太赫兹吸波器,面积约为0.60mm×0.65mm,包含75个吸波单元.吸波单元图案采用CMOS工艺中顶层铜金属,厚度为3.2μm,设计为正八边形和正方形开口谐振环的组合结构;介质层由无掺杂硅玻璃、碳化硅、氮化硅等组成,厚度为9.02μm;介质层背面短线采用CMOS工艺中的第一层金属,厚度为0.2μm.仿真结果表明,该吸波器在0.921THz、1.181THz2个频率处达到最大吸收率,分别为97.84%和95.76%.克服了采用砷化镓、薄膜工艺实现的太赫兹吸波器与CMOS工艺兼容问题,有利于在大规模集成电路中实现.

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