全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...
Physics  2013 

Planar graphene tunnel field-effect transistor

DOI: 10.1063/1.4863820

Full-Text   Cite this paper   Add to My Lib

Abstract:

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133