%0 Journal Article
%T Planar graphene tunnel field-effect transistor
%A V. L. Katkov
%A V. A. Osipov
%J Physics
%D 2013
%I arXiv
%R 10.1063/1.4863820
%X We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.
%U http://arxiv.org/abs/1310.6951v2