At
room temperature, 300 K, silicon carbide film was formed using monomethylsilane
gas on the reactive surface prepared using argon plasma. Entire process was
performed at reduced pressure of 10 Pa in the argon plasma etcher, without a
substrate transfer operation. By this process, the several-nanometer-thick
amorphous thin film containing silicon-carbon bonds was obtained on various
substrates, such as semiconductor silicon, aluminum and stainless steel. It is
concluded that the room temperature silicon carbide thin film formation is
possible even at significantly low pressure, when the substrate surface is
reactive.
References
[1]
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[2]
Rinaldi, A.M. and Crippa, D. (2001) Silicon Epitaxy. In: Crippa, D., Rode, D.L. and Masi, M., Eds., Academic Press, San Diego.
[3]
Kimoto, T. and Matsunami, H. (1994) Surface Kinetics of Adatoms in Vapor Phase Epitaxial Growth of SiC on 6H-SiC{0001}Vicinal Surfaces. Journal of Applied Physics, 75, 850-859. http://dx.doi.org/+10.1063/1.356439
[4]
Myers, R.L., Shishkin, Y., Kordina, O. and Saddow, S.E. (2005) High Growth Rates (>30 μm/h) of 4H-SiC Epitaxial Layers Using a Horizontal Hot-Wall CVD Reactor. Journal of Crystal Growth, 285, 486-490.
http://dx.doi.org/10.1016/j.jcrysgro.2005.09.037
[5]
Kotamraju, S., Krishnan, B., Melnychuk, G. and Koshka, Y. (2010) Low-Temperature Homoepitaxial Growth of 4H-SiC with CH3Cl and SiCl4 Precursors. Journal of Crystal Growth, 312, 645-650.
http://dx.doi.org/10.1016/j.jcrysgro.2009.12.017
[6]
Habuka, H. and Tsuji, M. (2013) Amorphous Silicon Carbide Chemical Vapor Deposition on Metal Surface Using Monomethylsilane Gas at Low Temperatures. Surface and Coatings Technology, 217, 88-93.
http://dx.doi.org/10.1016/j.surfcoat.2012.11.078
[7]
Praxair Material Safety Data Sheet, MSDS Plaxair, December 2009.
