%0 Journal Article
%T Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon  Carbide on Various Materials Surface
%A Hitoshi Habuka
%A Asumi Hirooka
%A Kohei Shioda
%A Masaki Tsuji
%J Advances in Chemical Engineering and Science
%P 389-395
%@ 2160-0406
%D 2014
%I Scientific Research Publishing
%R 10.4236/aces.2014.44042
%X At
room temperature, 300 K, silicon carbide film was formed using monomethylsilane
gas on the reactive surface prepared using argon plasma. Entire process was
performed at reduced pressure of 10 Pa in the argon plasma etcher, without a
substrate transfer operation. By this process, the several-nanometer-thick
amorphous thin film containing silicon-carbon bonds was obtained on various
substrates, such as semiconductor silicon, aluminum and stainless steel. It is
concluded that the room temperature silicon carbide thin film formation is
possible even at significantly low pressure, when the substrate surface is
reactive.
%K Silicon Carbide
%K Monomethylsilane
%K Chemical Vapor Deposition
%K Room Temperature
%K Reduce Pressure
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=49786