In this work,studied electrical conductivity(s) and
annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV
and doses of 1017el/cm2 (centimeter) and 2×1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of
complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T>300°C that binds accumulating radiation defects.
References
[1]
P. K. Chakraborty and K. P. Ghatak, Journal of Applied Physics, Vol. 89, 2001, pp. 1075-1081. http://dx.doi.org/10.1063/1.1330253
[2]
N. Q. Kolin, D. I. Merkurisov and S. P. Solovyev, FTS, Vol. 34, 2000, in press.
[3]
N. P. Kekelidze, Radiation Effects, 1977, Vol. 32, pp. 113-119. http://dx.doi.org/10.1080/00337577708237465
[4]
J. L. Benton, M. Levinson, A. T. Macrander, H. Tenikin and L. C. Kimerling, Applied Physics Letters, Vol. 45, 1984, p. 566. http://dx.doi.org/10.1063/1.95282
[5]
J. Suski and J. C. Boiurgoins, Journal Applied of Physics, Vol. 54, 1983, p. 2852. http://dx.doi.org/10.1063/1.332277
[6]
Y. W. Zhao, Z. Y. Dong, M. L. Duan and W. R. Sun, European Physical Journal Applied Physics, Vol. 27, 2004, pp. 167-169. http://dx.doi.org/10.1051/epjap:2004096
[7]
Sh. Sh. Rashidova, Journal of Engineering Physics and Thermophysics, Vol. 84, 2011, pp. 479-482. http://dx.doi.org/10.1007/s10891-011-0494-8
