%0 Journal Article
%T The Conductivity of Indium Phosphide Irradiated by Fast Electrons
%A Sh. Sh. Rashidova
%J Journal of Modern Physics
%P 1508-1510
%@ 2153-120X
%D 2013
%I Scientific Research Publishing
%R 10.4236/jmp.2013.411183
%X <p>
	<span style=\"font-family:Verdana;\">In this work,</span><span> </span><span><span style=\"font-family:Verdana;\">studied electrical conductivity(s) and
annealing of radiation defects in crystals of </span><i><span style=\"font-family:Verdana;\">n</span></i><span style=\"font-family:Verdana;\">-InP</span></span><span style=\"font-family:Verdana;\"> are</span><span style=\"font-family:Verdana;\"> irradiated by electrons energy</span><span style=\"font-family:Verdana;\"> of</span><span style=\"font-family:Verdana;\"> 6 MeV
and doses</span><span style=\"font-family:Verdana;\"> of</span><span><span style=\"font-family:Verdana;\"> 10</span><sup><span style=\"font-family:Verdana;\">17</span></sup></span><span> </span><span><span style=\"font-family:Verdana;\">el/cm</span><sup><span style=\"font-family:Verdana;\">2</span></sup><span style=\"font-family:Verdana;\"> (centimeter) and 2</span></span><span> </span><span style=\"font-family:Verdana;\">¡Á</span><span> </span><span><span style=\"font-family:Verdana;\">10</span><sup><span style=\"font-family:Verdana;\">17</span></sup><span style=\"font-family:Verdana;\"> el/cm</span><sup><span style=\"font-family:Verdana;\">2</span></sup><span style=\"font-family:Verdana;\"> (centimeter). It is shown that alongside point defects (in the form of
complexes with impurity atoms in crystals of </span><i><span style=\"font-family:Verdana;\">n</span></i><span style=\"font-family:Verdana;\">-InP</span></span><span style=\"font-family:Verdana;\">)</span><span><span style=\"font-family:Verdana;\"> also form the complex defects of the type of di</span><span style=\"font-family:Verdana;\">sordered</span><span style=\"font-family:Verdana;\"> areas</span><span style=\"font-family:Verdana;\">, annealing of which proceed</span></span><span style=\"font-family:Verdana;\">s</span><span><span style=\"font-family:Verdana;\"> at </span><i><span style=\"font-family:Verdana;\">T</span></i></span><span> </span><span style=\"font-family:Verdana;\">&gt;</span><span> </span><span style=\"font-family:Verdana;\">300¡ãC that binds accumu</span><span style=\"font-family:Verdana;\">lating radiation defects.</span> 
</p>
%K Antistructural Defects
%K Activation Energy
%K Indium Phosphide
%K Radiothermoluminescence Method
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=40050