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Mn掺杂ZnO薄膜的Raman散射特性
Raman Properties of Mn-Doped ZnO Thin Films

DOI: 10.12677/CMP.2013.21005, PP. 21-25

Keywords: ZnO；Mn；拉曼；稀磁半导体
ZnO, Mn, Raman, Diluted Magnetic Semiconductors

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Abstract:

利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列ZnO和ZnO:Mn薄膜。结合Raman光谱和X射线衍射谱分析了不同Ar流量条件下的ZnO和ZnO:Mn薄膜的结构特性。结果显示，未掺杂的ZnO薄膜呈现出显著的(002)定向生长特征，出现在437 cm？1的Raman散射峰进一步证实了这一点。将Mn掺杂进入ZnO薄膜后，在522 cm？1位置上显现出很强的Raman散射峰，这可能是与Mn掺杂后的晶格缺陷有关。随着Ar流量的增大，522 cm？1和A1(LO)模Raman散射峰均出现的红移趋势，可能是ZnO薄膜在引入Mn时导致的更多晶格缺陷所致。
ZnO and ZnO:Mn thin films were prepared on glass substrates at room temperature under the different Ar flow using RF magnetron sputtering method. Raman spectroscopy and X-ray diffraction spectra were used to

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