%0 Journal Article
%T Mn掺杂ZnO薄膜的Raman散射特性<br>Raman Properties of Mn-Doped ZnO Thin Films
%A 李彤
%A 介琼
%A 张宇
%A 王雅欣
%A 倪晓昌
%A 赵新为
%J Advances in Condensed Matter Physics
%P 21-25
%@ 2326-3520
%D 2013
%I Hans Publishing
%R 10.12677/CMP.2013.21005
%X <div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">利用射频磁控溅射方法在玻璃衬底上室温沉积了一系列</span><span style=\"line-height:1.5;\">ZnO</span><span style=\"line-height:1.5;\">和</span><span style=\"line-height:1.5;\">ZnO:Mn</span><span style=\"line-height:1.5;\">薄膜。结合</span><span style=\"line-height:1.5;\">Raman</span><span style=\"line-height:1.5;\">光谱和</span><span style=\"line-height:1.5;\">X</span><span style=\"line-height:1.5;\">射线衍射谱分析了不同</span><span style=\"line-height:1.5;\">Ar</span><span style=\"line-height:1.5;\">流量条件下的</span><span style=\"line-height:1.5;\">ZnO</span><span style=\"line-height:1.5;\">和</span><span style=\"line-height:1.5;\">ZnO:Mn</span><span style=\"line-height:1.5;\">薄膜的结构特性。结果显示，未掺杂的</span><span style=\"line-height:1.5;\">ZnO</span><span style=\"line-height:1.5;\">薄膜呈现出显著的</span><span style=\"line-height:1.5;\">(002)</span><span style=\"line-height:1.5;\">定向生长特征，出现在</span><span style=\"line-height:1.5;\">437 cm</span><span style=\"line-height:1.5;\">？1</span><span style=\"line-height:1.5;\">的</span><span style=\"line-height:1.5;\">Raman</span><span style=\"line-height:1.5;\">散射峰进一步证实了这一点。将</span><span style=\"line-height:1.5;\">Mn</span><span style=\"line-height:1.5;\">掺杂进入</span><span style=\"line-height:1.5;\">ZnO</span><span style=\"line-height:1.5;\">薄膜后，在</span><span style=\"line-height:1.5;\">522 cm</span><span style=\"line-height:1.5;\">？1</span><span style=\"line-height:1.5;\">位置上显现出很强的</span><span style=\"line-height:1.5;\">Raman</span><span style=\"line-height:1.5;\">散射峰，这可能是与</span><span style=\"line-height:1.5;\">Mn</span><span style=\"line-height:1.5;\">掺杂后的晶格缺陷有关。随着</span><span style=\"line-height:1.5;\">Ar</span><span style=\"line-height:1.5;\">流量的增大，</span><span style=\"line-height:1.5;\">522 cm</span><span style=\"line-height:1.5;\">？1</span><span style=\"line-height:1.5;\">和</span><span style=\"line-height:1.5;\">A</span><span style=\"line-height:1.5;\">1</span><span style=\"line-height:1.5;\">(LO)</span><span style=\"line-height:1.5;\">模</span><span style=\"line-height:1.5;\">Raman</span><span style=\"line-height:1.5;\">散射峰均出现的红移趋势，可能是</span><span style=\"line-height:1.5;\">ZnO</span><span style=\"line-height:1.5;\">薄膜在引入</span><span style=\"line-height:1.5;\">Mn</span><span style=\"line-height:1.5;\">时导致的更多晶格缺陷所致。</span>
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<div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">ZnO and ZnO:Mn thin films were prepared on glass substrates at room temperature under the different Ar flow using RF magnetron sputtering method. Raman spectroscopy and X-ray diffraction spectra were used to
%K ZnO；Mn；拉曼；稀磁半导体<br> ZnO
%K Mn
%K Raman
%K Diluted Magnetic Semiconductors
%U http://www.hanspub.org/journal/PaperInformation.aspx?PaperID=9423