Transformations in Submonolayer Coverages of Chromium and Titanium on Si (001) Surface

In this article the structure Si (001) surface covered by the pre-adsorbed (~ 1-3 nm) of Ti and Cr at room temperature after annealing at 450 °C was studied. It was found that after annealing on silicon surface formed island coverage. The investigation of stoichiometry shows that island’s composed of disilicide structure.