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Investigation of Implantation-Induced Damage in Indium Phosphide for Layer Transfer ApplicationsKeywords: Ion implantation , Damage , TEM , Nanocracks , Nanobubbles. Abstract: 100 keV H+ and He+ ion implantation was performed in 300 μm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 × 1017 cm–2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples.
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