%0 Journal Article
%T Investigation of Implantation-Induced Damage in Indium Phosphide for Layer Transfer Applications
%A U. Dadwal
%A V. Pareek
%A R. Scholz
%A M. Reiche
%J Journal of Nano- and Electronic Physics
%D 2011
%I Sumy State University
%X 100 keV H+ and He+ ion implantation was performed in 300 ¦Ìm thick (100) InP substrates at liquid nitrogen temperature with a constant fluence of 1 ¡Á 1017 cm¨C2. The surface morphology of the as-implanted InP samples was studied by optical microscopy. The implantation-induced damage was investigated by cross-sectional TEM, which revealed the formation of damage band in both cases near to the projected range of implanted ions. The formation of hydrogen-induced nanocracks and helium filled nanobubbles was observed in as-implanted InP samples.
%K Ion implantation
%K Damage
%K TEM
%K Nanocracks
%K Nanobubbles.
%U http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1081-1085.pdf