全部 标题 作者
关键词 摘要

OALib Journal期刊
ISSN: 2333-9721
费用:99美元

查看量下载量

相关文章

更多...

Modeling of Nanoscale MOSFET Performance in the Velocity Saturation Region

Keywords: Current-voltage , Drain source resistance , MOSFET , Threshold voltage , Velocity saturation

Full-Text   Cite this paper   Add to My Lib

Abstract:

Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology

Full-Text

Contact Us

service@oalib.com

QQ:3279437679

WhatsApp +8615387084133