%0 Journal Article
%T Modeling of Nanoscale MOSFET Performance in the Velocity Saturation Region
%A Michael Tan Loong Peng
%A Razali Ismail
%J Elektrika : Journal of Electrical Engineering
%D 2007
%I 
%X Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology
%K Current-voltage
%K Drain source resistance
%K MOSFET
%K Threshold voltage
%K Velocity saturation
%U http://www.fke.utm.my/elektrika/june07/paper7june07.pdf