The Effect of Device Geometry on the Performance of the ZnO MSM Photodetectors

In this paper, we present our study of the device geometry's effect on the performance of the ZnO MSM-PD. Thedevice geometry has a direct effect on the performance of the ZnO MSM-PD, specially, the speed of light’s detection.Several device geometry parameters of the ZnO MSM-PD were studied and analyzed. The performance of the ZnO MSMPDwas evaluated and determined based on different criteria: capacitance per unit area, carrier’s transit time, externalquantum efficiency, dark current, and photocurrent. These criteria were studied and analyzed using experimental methods inorder to achieve the optimum device geometric parameters for the ZnO MSM-PD.