%0 Journal Article
%T The Effect of Device Geometry on the Performance of the ZnO MSM Photodetectors
%A Ahmed M. Nahhas
%J Elektrika : Journal of Electrical Engineering
%D 2008
%I 
%X In this paper, we present our study of the device geometry's effect on the performance of the ZnO MSM-PD. Thedevice geometry has a direct effect on the performance of the ZnO MSM-PD, specially, the speed of lightĄ¯s detection.Several device geometry parameters of the ZnO MSM-PD were studied and analyzed. The performance of the ZnO MSMPDwas evaluated and determined based on different criteria: capacitance per unit area, carrierĄ¯s transit time, externalquantum efficiency, dark current, and photocurrent. These criteria were studied and analyzed using experimental methods inorder to achieve the optimum device geometric parameters for the ZnO MSM-PD.
%K CarrierĄ¯s transit time
%K Dark current
%K MSM-PD
%K Photocurrent
%K ZnO
%U http://www.fke.utm.my/elektrika/june08/paper1june08.pdf